Silicon Trench Etching by Electron Cyclotron Resonance Plasma
نویسندگان
چکیده
منابع مشابه
Characterization of Nitrogen-rich Silicon Nitride Films Grown by the Electron Cyclotron Resonance Plasma Technique
Amorphous hydrogenated silicon nitride films have been deposited by the electron cyclotron resonance plasma technique, using N2 and SiH4 as precursor gases. The gas flow ratio, deposition temperature and microwave power have been varied in order to study their effect on the properties of the films, which were characterized by Rutherford back-scattering spectrometry, elastic recoil detection ana...
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ژورنال
عنوان ژورنال: Journal of the Vacuum Society of Japan
سال: 2010
ISSN: 1882-4749,1882-2398
DOI: 10.3131/jvsj2.53.435